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MICROWAVE CORPORATION v02.0204 HMC286 GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz Features 2.4 GHz LNA Noise Figure: 1.7 dB Gain: 19 dB Single Supply: +3V No External Components Ultra Small SOT26 Package 8 AMPLIFIERS - SMT Typical Applications The HMC286 is ideal for: * BlueTooth * Home RF * 802.11 WLAN Radios * PCMCIA Platforms Functional Diagram General Description The HMC286 is a low cost Low Noise Amplifier (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise figure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression point is +6 dBm at 2.4 GHz. The compact LNA design utilizes on-chip matching for repeatable gain and noise figure performance. In addition, eliminating the external matching circuitry also reduces the overall size of the LNA function. The HMC286 was designed to meet the size constraints of PCMCIA platforms and uses the SOT26 package that occupies 0.118" x 0.118", which makes it a small fully integrated solution that can be easily implemented with other 2.4 GHz ASICs. Electrical Specifications, TA = +25 C, Vdd= +3V Parameter Frequency Range Gain Gain Variation Over Temperature Gain Flatness Noise Figure Input Return Loss Output Return Loss Output 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Supply Current (Idd) 2 9 16 Min. Typ. 2.3 - 2.5 19 0.015 1.25 1.7 12 4.5 6 12 8.5 12.5 2.5 0.03 Max. Units GHz dB dB/C dB dB dB dB dBm dBm mA 8 - 22 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0204 HMC286 GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 1.6 1.8 2 2.2 2.4 2.6 2.8 3 S21 S11 S22 Broadband Noise Figure 4 3.5 NOISE FIGURE (dB) 3 2.5 2 1.5 1 0.5 0 1.6 8 AMPLIFIERS - SMT 8 - 23 1.8 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) Gain vs. Temperature 24 23 22 21 GAIN (dB) 20 19 18 17 16 15 14 2.2 2.3 2.4 FREQUENCY (GHz) 2.5 2.6 Noise Figure vs. Temperature 4 3.5 NOISE FIGURE (dB) +25 C +85 C -40 C 3 2.5 2 1.5 1 0.5 0 2.2 +25 C +85 C -40 C 2.3 2.4 FREQUENCY (GHz) 2.5 2.6 Input Return Loss vs. Temperature 0 +25 C +85 C -40 C Output Return Loss vs. Temperature 0 -1 +25 C +85 C -40 C -5 RETURN LOSS (dB) -2 RETURN LOSS (dB) 2.6 -3 -4 -5 -6 -7 -8 -9 -10 -15 -20 -25 2.2 2.3 2.4 FREQUENCY (GHz) 2.5 -10 2.2 2.3 2.4 FREQUENCY (GHz) 2.5 2.6 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0204 HMC286 GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz 8 AMPLIFIERS - SMT Output P1dB vs. Temperature 15 Power Compression @ 2.4 GHz 25 20 10 P1dB (dBm) POUT (dBm), GAIN (dB) 15 10 5 0 -5 Gain Output Power 5 0 +25 C +85 C -40 C -5 2.2 2.3 2.4 FREQUENCY (GHz) 2.5 2.6 -10 -30 -25 -20 -15 -10 -5 FREQUENCY (GHz) Output IP3 vs. Temperature 20 THIRD ORDER INTERCEPT (dBm) +25 C +85 C -40 C Reverse Isolation vs. Temperature -20 REVERSE ISOLATION (dB) 15 -25 10 -30 +25 C +85 C -40 C 5 -35 0 2.2 2.3 2.4 FREQUENCY (GHz) 2.5 2.6 -40 2.2 2.3 2.4 FREQUENCY (GHz) 2.5 2.6 8 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0204 HMC286 GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 6.35 mW/C above 85 C) Thermal Resistance (channel to lead) Storage Temperature Operating Temperature +7.0 Vdc 0 dBm 150 C 0.413 W 8 AMPLIFIERS - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 157 C/W -65 to +150 C -40 to +85 C Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 25 MICROWAVE CORPORATION v02.0204 HMC286 GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz 8 AMPLIFIERS - SMT Pad Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is AC coupled and matched to 50 Ohms. 2, 5, 6 GND These pins must be connected to RF/DC ground. 3 VDD Power supply voltage. 4 RFOUT This pin is AC coupled and matched to 50 Ohms. 8 - 26 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0204 HMC286 GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material for Evaluation PCB 103743* Item J1, J2 J3, J4 U1 PCB** Description PC Mount SMA Connector DC Pin HMC286 Amplifier 103741 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. **Circuit Board Material: Roger 4350 *Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 27 |
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